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| LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. MMUN2111LT1 Series MMUN2111LT1 SERIES 3 1 2 CASE 318, STYLE 6 SOT-23 (TO-236AB) * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel. PIN 1 BASE (INPUT) R1 PIN 3 COLLECTOR (OUTPUT) R2 PIN 2 EMITTER (GROUND) MARKINGDIAGRAM A6x M MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc A6x = Device Marking x M = A - L(See Page 2) = Date Code DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Lead Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Symbol PD Max 246 (Note 1.) 400 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) 508 (Note 1.) 311 (Note 2.) 174 (Note 1.) 208 (Note 2.) -55 to +150 Unit mW C/W C/W C/W C data sheet. RJA RJL TJ, Tstg MMUN2111S-1/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series DEVICE MARKING AND RESISTOR VALUES Device MMUN2111LT1 MMUN2111LT3 MMUN2112LT1 MMUN2112LT3 MMUN2113LT1 MMUN2113LT3 MMUN2114LT1 MMUN2114LT3 MMUN2115LT1 (Note 3.) MMUN2115LT3 MMUN2116LT1 (Note 3.) MMUN2116LT3 MMUN2130LT1 (Note 3.) MMUN2130LT3 MMUN2131LT1 (Note 3.) MMUN2131LT3 MMUN2132LT1 (Note 3.) MMUN2132LT3 MMUN2133LT1 (Note 3.) MMUN2133LT3 MMUN2134LT1 (Note 3.) MMUN2134LT3 Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Marking A6A A6B A6C A6D A6E A6F A6G A6H A6J A6K A6L R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 Shipping 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (V EB = 6.0 V, IC = 0 ) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 ICBO ICEO IEBO - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 - - nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) 3. New devices. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc MMUN2111S-2/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 5.) DC Current Gain (V CE = 10 V, IC = 5.0 mA ) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 - 60 100 140 140 250 250 5.0 15 27 140 130 - - - - - - - - - - - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (V CC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1 VCE(sat) VOL - - - - - - - - - - - VOH 4.9 - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc (V CC = 5.0 V, VB = 3.5 V, RL = 1.0 k ) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k ) Vdc (VCC MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 = 5.0 V, VB = 0.050 V, RL = 1.0 k ) MMUN2130LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 - 0.8 0.055 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 - 1.0 0.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 - 1.2 0.185 k Input Resistor Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% R1/R2 MMUN2111S-3/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1 250 PD , POWER DISSIPATION (MILLIWATTS) 200 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 75C 0.1 25C 150 100 50 0 -50 RJA = 625C/W 0 50 100 150 0.01 0 20 40 60 80 TA, AMBIENT TEMPERATURE (C) IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve 1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V 4 Figure 2. VCE(sat) versus IC 100 TA = 75C 25C -25C Cob , CAPACITANCE (pF) 3 f = 1 MHz lE = 0 V TA = 25C 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 3. DC Current Gain 100 Figure 4. Output Capacitance 75C 25C TA = -25C 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 10 1 10 TA = -25C 25C 75C 0.1 1 0.01 0.001 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current MMUN2111S-4/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 1000 h FE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 1 75C VCE = 10 V TA = 75C 100 25C -25C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 10 1 2 0.1 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current MMUN2111S-5/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 0.1 75C 1000 h FE , CURRENT GAIN (NORMALIZED) TA = 75C 25C 100 -25C 25C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC 1 I C , COLLECTOR CURRENT (mA) 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25C 100 10 1 0.1 0.01 Figure 13. DC Current Gain TA = 75C 25C -25C VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 TA = -25C 10 VO = 2 V 25C 75C Vin , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current MMUN2111S-6/11 LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C TA = 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C 100 Figure 18. DC Current Gain TA = 75C IC, COLLECTOR CURRENT (mA) -25C 25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) +12 V TA = -25C 25C 75C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source MMUN2111S-7/11 |
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